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低于1×10^(-6)/℃的低压CMOS带隙基准电流源 被引量：1

Sub-1×10^(-6)/℃ Low Voltage CMOS Bandgap Current Reference
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摘要 提出了一种新颖的CMOS带隙基准电流源的二阶曲率补偿技术,通过增加一个运算跨导放大器(OTA),使带隙基准参考电路的电流特性与理论分析相符合,实现低温度系数(TC)的参考电流。该电路采用SMIC0.13μm标准CMOS工艺,可在1.2 V的电源电压下工作,有效面积为0.045 mm2。仿真结果表明,在-40～85℃温度范围内参考电流的温度系数为0.5×10-6/℃;当电源电压为1.1 V时,电路依然可以正常工作,电源电压调整率为1 mV/V。 A novel second-order curvature-compensation technology of CMOS bandgap current reference circuit is proposed.By adding an operational transconductance amplifier（OTA） to make current characteristics of bandgap reference circuit according to theory analysis,low temperature coefficient（TC） reference current was achieved.The circuit was designed with SMIC 0.13 μm standard CMOS technology,which worked at 1.2 V power voltage and consumes 0.045 mm^2 areas.Simulation result shows that the TC of reference current is 0.5×10^-6/℃ from-40 ℃ to 85 ℃.When power voltage is 1.1 V,circuit still works with 1 mV/V power voltage coefficient.
作者 张欣旺 孟海涛 杜占坤 阎跃鹏
机构地区 中国科学院微电子研究所
出处 《半导体技术》 CAS CSCD 北大核心 2010年第5期485-488,共4页 Semiconductor Technology
基金 国家高技术研究发展计划项目(2009AA12Z314)
关键词 带隙基准电流源 温度系数 二阶曲率补偿 电源电压调整率 bandgap current reference temperature coefficient（TC） second-order curvature-compensation power voltage coefficient
分类号 TN432 [电子电信—微电子学与固体电子学]
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参考文献9

  • 1DEHGHANI R,ATARODI S M.A new low voltage precision CMOS current referenee with no extemal components[J].IEEE Tram on Circuits and Systems Ⅱ,Analog and Digital Signal Proce,2003,50(12):928-932.
  • 2CHEN J W,SHI X.1 V CMOS current reference with 50 ppm/℃ temperature coefficient[J].EL,2003,39(2):209-210.
  • 3FIORI F,CROVETTI P S.A new compact temperature-compensated CMOS current roference[J].IEEE Trans on Circuits and Systems Ⅱ,Express Briefs,2005,52(11):724-728.
  • 4JIANG Y M,LEE E K F.Design of low-voltage bandgap reference using transimpedance amplifier[J].IEEE Trans on Circuits and Systems Ⅱ,Express Briefs,2000,47(6):552-555.
  • 5BANBA H,SHIGA H,UMEZAWA A,et al.A CMOS bandgap reference circuit with sub-1-V operation[J].IEEE JSSC,1999,34(5):670-674.
  • 6LEUNG K N,MOK P K T.A sub-1-V 15-ppm/℃ CMOS bandgap voltage reference without requiring low threshold voltage device[J].IEEE JSSC,2002,37(4):526-530.
  • 7MALCOVATI P,MALOBERTI F,FIOCCHI C,et al.Curvature-compensated BiCMOS bandgap with 1-V supply voltage[J].IEEE JSSC,2001,36(7):1076-1081.
  • 8TSIVIDIS Y P.Accurate analysis oftemperature effects in Ic-VBE characteristics with application to bandgap reference sources[J].IEEE JSSC,1980,15(6):1076-1084.
  • 9CHEN Y,ZHONG S A,DANG H.Design of a bandgap current reference with wide range of output voltage in a 0.18μm BiCMOS process[C] //Proe of 2009 WRI world Conf on Computer Science and Information Engineering (CSIE 2009).Los Angeless,USA,2009:384-386.

同被引文献10

  • 1江金光,王耀南.高精度带隙基准电压源的实现[J].Journal of Semiconductors,2004,25(7):852-857. 被引量：28
  • 2Van der Plas G, Vandenbussche J, Sansen W, et al. A 14-bit intrinsic accuracy Q2 random walk CMOS DAC [J]. IEEE J. Solid-State Circuits, 1999, 34 (12) : 1708-1718.
  • 3Douglas A. Mercer, Low-Power Approaches to High-Speed Current-Steering Digital-to-Analog Con- verters in 0. 18-um CMOS [J]. IEEE J. Solid-State Circuits, 2008, 42(8) :1688-1698.
  • 4Cong Y, Geiger R. A 1. 5-V 14-bit 100-MS/s self- calibrated DAC [J]. IEEE J. Solid-State Circuits, 2003, 38(12) .. 2051-2060.
  • 5Bastos J, Marques A, Steyaert M, et al. A 12-bit in- trinsic accuracy high-speed CMOS DAC I-J3. IEEE J. Solid-State Circuits, 1998, 33(12) .. 1959-1969.
  • 6Miki T, Nakamura Y, Nakaya M, et al. An 80MHz 8bit CMOS D/A Converter EJ3. IEEE J. Solid-State Circuits, 1986 (10) : 983-988.
  • 7Nakamura Y, Miki T, Maeda A, et al. A 10-bit 70MS/s CMOS D/A converter [-J. IEEE J. Solit- State Circuits, 1991,26:637-642.
  • 8GuanXK, Wan G A. A 3 V 110 W 3.1 ppm/C Curvature compensated CMOS bandgap reference I- C] IEEE ISCAS. Island of Kos, Greece, 2006: 602- 606.
  • 9Dehghani R, Atarodi S M. A new low voltage preci- sion CMOS current reference with no external compo- nents[J]. IEEE Trans on Circuits and Systems ]l, Analog and Digital Signal Proee, 2003,50 (12):928- 932.
  • 10Fiori F, Crovetti P. A new compact temperature- compensated CMOS current reference J]. IEEE Trans on Circuits and Systems ]I , Express Briefs, 2005,52(11) :724-728.

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半导体技术
2010年 第5期

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