摘要
目前,数字集成电路朝着高功率,低电压的方向发展,电源地平面上的同步开关噪声成为高速设计的主要瓶颈之一。文章阐述了同步开关噪声的形成原理和产生问题,详细分析了现有抑制SSN的主要方法,最后通过结构图和仿真效果图重点介绍电磁带隙结构(EBG)的设计方法、研究思路和最新发展趋势.为今后的实际应用研究提供一定的参考指导。
With trend of the digital integrated circuit toward high power and low voltage, Simultaneous Switching Noise （SSN） has become the bottleneck of the high speed design on the power plane. The article presents the formation and rele- vant problems of SSN, analyses primary methods of restraining SSN, and finally emphasizes on the design methodology and latest development tendency of EBG through construction drawing and simulation effect diagram in the hope of provid- ing some references in future practical study.
出处
《电子质量》
2010年第5期73-76,共4页
Electronics Quality
关键词
同步开关噪声
去耦电容
电磁带隙结构
分析
Simultaneous Switch Noise
decoupling capacitor
electromagnetic band gap
analysis
