摘要
采用碳化硼添加量不同的铁基触媒,在高温高压下合成含硼金刚石单晶。用数字电桥和自制的电阻测量夹具测量了含硼金刚石单晶的电阻;用阴极射线发光光谱测量了金刚石单晶的光子频数;用XRD检测了不同硼含量掺杂的金刚石单晶的晶体结构。结果表明:随着触媒中碳化硼添加量的增加,含硼金刚石单晶的电阻率降低,可呈现半导体电阻特性。其原因是硼元素的掺入促进了金刚石单晶的(111)晶面生长,使受主能级提高,晶体的带隙变窄,载流子浓度提高。
By additing of different contents of boron carbides in the iron-based catalysts,the boron-doped diamond single crystals had been synthesized under high pressure and high temperature.The resistances of the diamonds with different boron concentration were measured by a digital electric bridge and the self-made electrode clamps.The variations of photon numbers were detected by a cathodeluminescence.The phase structures were characterized by XRD.The results show that the specific resistance of the boron-doped diamonds significantly decreased with the increase of boron concentration and to be a semiconductor.It is indicated that the boron doping promotes the growth of（111） face of the diamonds,enhances acceptor level,narrow＇ s band gap and increases carrier concentration correspondingly.
出处
《人工晶体学报》
EI
CAS
CSCD
北大核心
2010年第2期295-298,303,共5页
Journal of Synthetic Crystals
基金
国家自然科学基金(No.50772060)
山东省自然科学基金(Y2007F12)
关键词
含硼金刚石
碳化硼
高温高压合成
电阻
boron-doped diamond
boron carbide
synthesis under HPHT
resistance
