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磁控溅射Cd_(1-x)Zn_xTe多晶薄膜组分的可控生长

Composition Controllable Growth of Polycrystal Cd_(1-x)Zn_xTe Films by Magnetron Sputtering
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摘要 采用双靶位共溅射方法制备出组分可控的Cd1-xZnxTe薄膜样品,组分偏离小于0.13。采用XRD对不同生长温度制备的样品进行了结晶性分析,研究了薄膜结晶与生长温度的关系。采用AFM、SEM对样品进行了表面和界面分析,表明薄膜表面平整,界面清晰。对不同组分的Cd1-xZnxTe样品进行了透射光谱测量,得到了光学性质随组分的变化规律,并拟合得出了这些样品的带隙和组分。 Cd1-xZnxTe films were deposited by dual targets magnetron sputtering co-deposition.The composition error was found to be Δx0.013.The influences of growth temperature on the crystalline characteristics were determined by X-ray diffraction(XRD).SEM and AFM results show that the films have flat surfaces and clear interfaces.Optical energy gaps of Cd1-xZnxTe films with different x were simulated from the transmittance measurements.
出处 《人工晶体学报》 EI CAS CSCD 北大核心 2010年第2期341-344,364,共5页 Journal of Synthetic Crystals
基金 中国科学院太阳能行动计划项目(No.1731011240 08w1472w01) 上海浦东科委种子基金(PKZ2008-05)
关键词 Cd1-xZnxTe薄膜 磁控溅射 透射光谱 Cd1-xZnxTe films magnetron sputtering transmittion
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参考文献4

  • 1Asahi T,Oda O,Taniguchi Y,et al.Growth and Characterization of 100 mm Diameter CdZnTe Single Crystals by the Vertical Gradient Freezing Method[J].J.Cryst.Growth,1996,161:20-27.
  • 2Pfeiffer M,Muhlberg M.Interface Shape Observation and Calculation in Crystal Growth of CdTe by the Vertical Bridgman Method[J].J.Cryst.Growth,1992,118:269-276.
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