期刊文献+

沉积温度对Zn_(0.95)Co_(0.05)O稀磁半导体薄膜结构与磁性的影响 被引量:1

Effect of Deposition Temperature on Structure and Magnetism of Zn_(0.95)Co_(0.05)O DMS Thin Films
下载PDF
导出
摘要 本文利用磁控溅射法在Si(100)衬底上制备了Zn0.95Co0.05O薄膜,考察了沉积温度对Zn0.95Co0.05O样品的结构与磁性的影响。采用XRD、FESEM、XPS和SQUID等方法对样品的结构与磁性进行了表征与分析。XRD结果表明:Zn0.95Co0.05O薄膜样品为纤锌矿结构且具有(002)择优生长,不存在Co和其他杂质相。XPS数据证明:薄膜样品中的Co是以Co2+形式存在,并且Co2+占据ZnO晶格中的Zn原子位。磁滞回线表明:Zn0.95Co0.05O薄膜具有明显的室温铁磁性,随着沉积温度的升高,薄膜的铁磁性逐步减弱。 Zn0.95Co0.05O thin films were deposited on Si(100) substrates by RF magnetron sputtering and the effect of deposition temperature on the structure and magnetism of the films was investigated.The structure and magnetism of the films were analyzed by XRD,FESEM,XPS and SQUID.XRD patterns show that all the films with hexagonal wurtzite crystal structures and have highly c-axis orientation.Co cluster and other impurity phase were not observed.XPS spectra reveal that Co cations are in the +2 oxidation state and that Co^2+ is incorporated into the wurtzite lattice at Zn sites.M-H curves indicate that the Zn0.95Co0.05O samples exhibit ferromagnetic behavior.With increasing the deposition temperature,the ferromagnetic properties become weaker.
出处 《人工晶体学报》 EI CAS CSCD 北大核心 2010年第2期465-469,共5页 Journal of Synthetic Crystals
关键词 Zn0.95Co0.05O薄膜 沉积温度 磁控溅射 磁性 Zn0.95Co0.05O thin films deposition temperature RF magnetron sputtering magnetic properties
  • 相关文献

参考文献20

  • 1Furdyna J K.Diluted Magnetic Semiconductors[J].J.Appl.Phys.,1988,64(4):R29.
  • 2Ohno H,Chiba D,Matsukura F,et al.Electric-field Control of Ferromagnetism[J].Nature,2000,408:944-946.
  • 3Dietl T,Ohno H,Matsukura F,et al.Model Description of Ferromagnetism in Zinc-blende Magnetic Semiconductors[J].Science,2000,287:1019-1022.
  • 4Kazunori S,Hiroshi K Y.Stabilization of Ferromagnetic States by Electron Doping in Fe-,Co-or Ni-doped ZnO[J].Jpn.J.Appl.Phys.,2001,40:L334-L336.
  • 5Kazunori S,Hiroshi K Y.Material Design for Transparent Ferromagnets with ZnO-based Magnetic Semiconductors[J].Jpn.J.Appl.Phys.,2000,39:L555-L558.
  • 6Tetsuya Y,Hiroshi K Y.Solution Using a Co doping Method to Unipolarity for the Fabrication of p-type ZnO[J].Jpn.J.Appl Phys.,1999,38:L166-L169.
  • 7Kenji U,Hitoshi T,Tomoji K.Magnetic and Electric Properties of Transition-metal-doped ZnO Films[J].Appl.Phys.Lett.,2001,79(7):988-990.
  • 8Lee H J,Jeong S Y,Cho C R,et al.Study of Diluted Magnetic Semiconductor:Co-doped ZnO[J].Appl.Phys.Lett.,2002,81(21):4020-4022.
  • 9Choi C H,Kim S H.Characterizations of Ferromagnetic Zn1-xCoxO Thin Films Grown on Al2O3 (0001) by Reactive Radio-frequency Magnetron Sputtering Coupled with Post-growth Annealing[J].Thin Solid Films,2007,515:2864-2871.
  • 10Kim J H,Kim H,Kim D,et al.The Origin of Room Temperature Ferromagnetism in Cobalt-doped Zinc Oxide Thin Films Fabricated by PLD[J].J.European Ceramic Society,2004,24:1847-1851.

同被引文献13

引证文献1

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部