摘要
本文阐述了用ＲＢＳ／ｃｈａｎｎｅｌｉｎｇ技术研究异质外延ＧａＮ及其三元合金薄膜的重要性和必要性，报道了实验测量出的ＧａＮ及其三元合金ＡｌＧａＮ、ＩｎＧａＮ膜的结构，给出了较为准确的元素种类、成分配比、薄膜厚度、合金元素的浓度随深度的分布、结晶品质、晶轴取向等信息，测出了几种薄膜的背散射沟道谱与随机谱之比χｍｉｎ值（Ａｌ０．１５Ｇａ０．８５Ｎ的χｍｉｎ值可低至１．１７％）和沟道坑的半角宽Ψ１／２（ＧａＮ的半角宽为０．７４°），对于其他测试方法无法给定的中间层的情况及不同衬底对成膜的影响，本文亦有明确的说明．
Abstract GaN,
AlGaN and InGaN crystalline films were formed by metalorganic vapour phase epitaxy method.
The structures of these films were studied by Rutherford backscattering spectrometry and
channeling. We got many properties of the films, such as their chemical component, thickness,
dopant density versus depth, the crystalline quality, the orientation of the crystallographic axis.
Some alloy films χ min value (Al 0.15 Ga 0.85 N’s χ min value is as low as
1 17%) and half angle width (half width of GaN is 0 74°) were measured. We also got the
property of the buffer layer of the films and the influence of different substrates on the growth of
the films. It shows that GaN and its ternary alloy with high crystalline quality can be
heteroeptiaxially grown on the Al 2O 3 substrate.
基金
北京大学重离子物理研究所国家教委开放实验室资助
