摘要
运用透射电子显微镜分析了分子束外延的立方相ＧａＮ／ＧａＡｓ异质微观结构．在ＧａＮ外延层中，观察到大量的、不对称的｛１１１｝面缺陷（层错和微孪晶），以及失配位错在该大失配界面上的非优化排列。
Abstract A cubic GaN/GaAs
heterostructure grown by molecular beam epitaxy (MBE) is studied by transmission electron
microscopy. It is observed that a lot of {111} planar defects (stacking faults and microtwins)
distributed asymmetrically in this GaN film and misfit dislocations lay non optimally at the
interface. The mechanism of forming planar defects is discussed.
基金
国家自然科学基金
国家博士后流动基金
