掺铒富硅氧化硅薄膜的光致发光

Photoluminescence From Erbium Implanted Silicon Rich SiO 2

本文研究了富硅氧化硅薄膜掺入铒的发光特性．富硅氧化硅薄膜（氧含量为６０％）采用ＰＥＣＶＤ方法生长，室温下离子注入铒，经过８００℃，５ｍｉｎ的退火，在１０～３００Ｋ温度下得到较强的波长１．５４μｍ光致发光．发光强度随温度升高而下降，其温度猝灭激活能为１４．３ｍｅＶ．发光谱表明富硅氧化硅中Ｅｒ－Ｏ发光中心仍具有Ｔｄ对称性．

Abstract Si rich SiO 2 films were deposited by plasma enhanced CVD onto silicon substrates, then implanted with 1×10 15 cm -2 400keV Er ions. After annealing at 800 ℃ for 5min, the samples show strong photoluminescence around 1 54μm at 10￣300K. By increasing temperature the photoluminescence intensity decreases, indicating quenching mechnism with activation energy of 14 3meV. Luminescence spectra shows that Er O luminescence centers with T d symmetry exist.