摘要
本文给出了深亚微米ＭＯＳ器件热载流子效应及可靠性研究与进展．对当前深亚微米ＭＯＳ器件中的主要热载流子现象以及由其引起的器件性能退化的物理机制进行了详细论述．不仅对热电子，同时也对热空穴的影响进行了重点研究，为深亚微米ＣＭＯＳ电路热载流子可靠性研究奠定了基础．本文还讨论了深亚微米器件热载流子可靠性模型，尤其是ＭＯＳ器件的热载流子退化模型．
The paper presents a survey of recent advances in deep submicron MOSFET's hot carrier reliability.The main phenomena and physical mechanisms of the hot carrier induced MOSFET's degradation are introduced,with emphasis both on the effect of hot electrons and on that of hot holes,which may lay the foundation for the research of deep submicron hot carrier reliability in CMOS ciruits.The modeling of deep submicron MOSFET's hot carrier reliability,especially the hot carrier induced degradation in deep submicron MOSFET's is also discussed.
出处
《电子学报》
EI
CAS
CSCD
北大核心
1999年第2期76-80,43,共6页
Acta Electronica Sinica
基金
国防科技电子预研项目资助
