摘要
试验了用柠檬酸与双氧水系列腐蚀液来实现ＩｎＡｌ（Ｇａ）Ａｓ∶ＩｎＰ和ＩｎＧａＡｓ∶ＩｎＡｌＡｓ的选择腐蚀，达到了较好的效果，且工艺重复性好。同一单片上ＭＳＭ（金属－半导体－金属）光探测器的光响应度可达到０．５Ａ／Ｗ，ＨＥＭＴ器件最大跨导为３０５ｍＳ／ｍｍ，最大饱和电流密度为３５０ｍＡ／ｍｍ。完成了实现ＯＥＩＣ光接收机的关键一步。
In this work,selective etching of InAl(Ga)As∶InP and InGaAs∶InAlAs has been effectively realized using citric acid and H 2O 2 series etchant.In the same chip,the responsivity of MSM photodetector is 0 5A/W,the maximum transconductance of HEMT is 305mS/mm and the maximum current density is 350mA/mm.This is the key step to realize OEIC photoreceiver.
出处
《半导体情报》
1999年第1期47-49,共3页
Semiconductor Information
