摘要
采用二维数值模拟方法详细分析了基区复合电流对 n Si/p Si1- x Gex/n Si应变基区异质结双极晶体管 ( HBT)共射极电流放大系数 β的影响 ,给出了 Si1- x Gex HBT的 Gummel图、平衡能带图 .得出在靠近发射结附近基区的复合电流是引起 β下降的主要因素 ,并给出了减小基区复合电流的 Ge分布形式 .
The influence of base recombination on common emitter gain in nSi/pSi 1- x Ge x /nSi heterojunction bipolar transistors (HBT’s) has been analyzed in detail by two dimension numerical simulation method. Gummel plot and equilibrium energy band diagram of Si 1- x Ge x HBT are shown. We conclude that the base recombination near the emitter junction is the main reason to cause the common emitter gain decrease. In addition,an ideal Ge distribution in base is given which can decrease the base recombination current.
基金
国家自然基金资助项目
