激光作用下多量子阱混迭的热动力学分析

Thermodynamic analysis of laser heating in MQW disordering

对ＩｎＧａＡｓ／ＩｎＧａＡｓＰ多量子阱材料，根据温度场方程计算了两种激光作用下多量子阱混迭技术（ＰＡＩＤ及ＰＬＤ）的横向空间选择性，得到ＰＡＩＤ在一般情况下的横向空间选择性为１００μｍ量级，而ＰＬＤ的理论极限为１００μｍ。同时分析了混迭多量子阱材料的能带结构与组分扩散长度的关系，从理论上提出了低温量子阱材料与扩散长度之间的关系曲线。

In this paper, the corresponding temperature field in two laser induced intermixing scheme (i.e. PAID & PLD) of InGaAs/InGaAsP MQW material was calculated, by the finite element method to study their transverse space resolution. From this analysis, it is found that the space resolution of PAID is on level of 100μm, and the PLD scheme has theoretically unlimited resolution capability. At the same time, the subband structure of the intermixed MQW wafer is analyzed, and the theoretical relationship between PL peak spectral position and diffusion length is deduced.