摘要
本文分析了一个单量子阱的随频率变化的Ｇ－Ｖ特性，提出用电导法测量量子阱的能带偏移．通过对一个Ｓｉ１－ｘＧｅｘ／Ｓｉ单量子阱的实验Ｇ－Ｖ曲线的分析。
Abstract The
frequency dependent conductance voltage characteristics of a sample with a single quantum well
included are studied. A conductance method is proposed to measure the band offsets of quantum
wells. The technique is verified by analyzing the experimental G V curves of a Si/Si 1- x Ge
x /Si quantum well.
关键词
量子阱
能带偏移
电导法
硅
锗
测量
Semiconducting germanium compounds
Semiconductor quantum wells
