半导体激光器阵列电-光特性导数测量方法

Optic and Electric Derivative Measurement of High Power Laser Diode Arrays

高功率阵列半导体激光器已得到广泛应用,对其质量和可靠性进行无损检测很有必要。在导数测试技术中,参数h是电导数曲线阈值处的下沉高度,参数Q是二阶光导数曲线阈值处的峰的高宽比。对导数测试参数h,Q与阵列激光器的单元器件的质量和均匀性进行了研究。基于其等效电路在一定条件下,计算了阵列激光器的均匀性对h的影响。并对实际阵列器件进行了导数测试。理论和实验结果对比表明,h,Q等参数是组成阵列的各管芯的均匀性的灵敏参数。

High power laser diode arrays（LDA） have been used widely.A nondestructive and effective method is desired to evaluate the quality of LDA.The parameter h is the sinkage at the threshold in the electric derivative curve,and the parameter Q is the ratio of the height to the width of the peak sharp in the second optical derivative curve at the threshold in the presented derivative technique.The dependence of the value of h and Q on the uniformity and quality of the laser diode bars is analyzed.By using the equations derived from the equivalent circuits of the bars,the influence of the bar uniformity on the behavior of the value of h is investigated in theory under certain conditions.Compared the compute results with the experiment results,for the same kind devices,it shows that h and Q are both sensitive parameter about the cell uniformity.