IGBT模块的开关暂态模型及损耗分析

Switching Transients Model and Loss Analysis of IGBT Module

总结了绝缘栅双极型晶体管(insulated gate bipolar transistor,IGBT)模块的功率管及反并联二极管开关暂态过程的主要特征,建立了相应的开关模型,并在此基础上得到了损耗分析模型。建立的开关模型充分考虑了导通电流对开关暂态过程的影响,利用该模型可准确再现任意一个开关周期的开关暂态电压、电流波形,为功率变换器的损耗分析奠定了基础。该模型不仅适用于DC/DC变换器,而且适用于相邻开关周期内开关管导通电流不相等的变换器,如AC/DC和DC/AC变换器。采用Simulink/Stateflow对开关暂态过程及损耗模型进行了仿真,仿真与实验结果对比证实了所提出的开关模型和损耗模型的正确性。

Main characteristics of insulated gate bipolar transistor （IGBT） and the anti-paralleled diode during switching transient are concluded, and the corresponded switching model is deduced based on which, the loss analysis model is proposed. The influence of conduction current on switching transients has been taken into consideration in the proposed switching model and the waveforms of voltage and current during switching transients of any given switching period can be represented, which lay a foundation for loss analysis of power converters. The novel switching model is suitable not only for the DC/DC converter, but also for AC/DC and DC/AC converters, in which the conduction current vary between the adjacent switching period. Simulink/Stateflow is used to simulate the switching process and analyse the losses. The proposed switching model and loss analysis model have been validated by the simulation and experimental results.