Y_3Ga_5O_(12)单晶及其晶纤的生长

Crystal Growth Characteristic of YGG and Its Fiber

本文介绍了用CZ法生长Nd:Y_3Ga_5O_(12)(YGG)大单晶。YGG熔体易挥发,且其对流花样呈涡流状。X射线衍射相分析表明挥发物为Ga_2O_3。加大炉内保护气N_2压力或用98％N_2及2％O_2的混合气体,都可明显的抑制Ga_2O_3的挥发。常压激光加热基座生长(LHPG)法不能生长YGG单晶光纤。对晶纤的X射线能谱分析(EDS)表明,YGG中Ga_2O_3探发很严重,且Ga从中心迁移到边缘,造成晶纤中组分极不均匀。

In this paper CZ method was used to study the growth of Nd-doped YGG bulk single crystal. The melt of YGG is easy to vaporize, andits flow pattern seems to be verticity. X-ray diffraction shows that the vapo-rized deposit is Ga_2O_3. Increasing the pressure of N_2 in the chamber or usingthe mixture gas of 98% N_2 and 2% O_2, the vaporization of Ga_2O_3 can bedepressed significantly. Laser-heated pedestal growth (LHPG) method atnormal pressure does not approach for single crystal fiber growth of Nd: YGG due to its melt evaporates incongruently. Energy dispersive spectra (EDS)shows that YGG melt losses Ga_2O_3 component preferentially, and the Ga mo-ves away from center to the surface, the constitute of the fiber derives fromstoichiometry seriously.