窄禁带光子晶体能态密度的研究

Study on Energy State Density Distribute of Narrow Gap of Photonic Crystal

利用平面波展开法研究了窄禁带光子晶体材料的能态密度分布情况,得到了窄禁带材料构成的三角晶格光子晶体能态密度随着介电常数差值的增大而增大,并且分析了氮化镓在f=0.3时,能态密度分布最小,出现最大光子带隙。研究结果为窄禁带光子晶体器件的构造提供理论依据。

Energy state density distribute of photonic crystal were calculated by plane wave expansion method （PWM）.Energy state density distribute of triangular lattice photonic crystals with narrow gap are proved to increase with the dielectric constant.It was found that minimum density state was obtained when f=0.3 of GaN.This result provides theoretic basis for the narrow gap of photonic crystal devices.