摘要
对0.13μm工艺下的切断反馈回路的单粒子效应加固电路进行了研究,对其机理进行了分析,并对该结构进行了单粒子瞬变效应加固方面的改进,进而提出一种新的单粒子效应加固的D触发器,在0.13μm工艺下进行了SPICE模拟验证,可以在100 MHz的工作频率下对LET为25 MeV·cm^2/mg的单粒子轰击达到加固,相比于同类结构拥有更小的面积和功耗.
The mechanism and feasibility of SEE mitigating structure based on blocking the feedback loop for a 0. 13 μm technology are analyzed, and the SET mitigation of the basic structure is improved. A new D flip-flop based on the present approach is proposed. SPICE simulation for 0. 13 μm technology shows the immunity to both SEU and SET events for the LET up to 25 MeV. cm2/mg at the operating frequency of 100 MHz, while compared with its counterparts the chip area and power cost are substantially reduced.
出处
《复旦学报(自然科学版)》
CAS
CSCD
北大核心
2010年第2期158-164,共7页
Journal of Fudan University:Natural Science