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基于0.13μm工艺的切断反馈回路单粒子效应加固电路的研究

Research of SEE Mitigating Structure Based on Blocking Feedback Loop for a 0.13 μm Technology
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摘要 对0.13μm工艺下的切断反馈回路的单粒子效应加固电路进行了研究,对其机理进行了分析,并对该结构进行了单粒子瞬变效应加固方面的改进,进而提出一种新的单粒子效应加固的D触发器,在0.13μm工艺下进行了SPICE模拟验证,可以在100 MHz的工作频率下对LET为25 MeV·cm^2/mg的单粒子轰击达到加固,相比于同类结构拥有更小的面积和功耗. The mechanism and feasibility of SEE mitigating structure based on blocking the feedback loop for a 0. 13 μm technology are analyzed, and the SET mitigation of the basic structure is improved. A new D flip-flop based on the present approach is proposed. SPICE simulation for 0. 13 μm technology shows the immunity to both SEU and SET events for the LET up to 25 MeV. cm2/mg at the operating frequency of 100 MHz, while compared with its counterparts the chip area and power cost are substantially reduced.
作者 孙鹏 沈鸣杰 程君侠 郑国祥 曾韡
机构地区 复旦大学材料科学系 复旦大学专用集成电路与系统国家重点实验室
出处 《复旦学报（自然科学版）》 CAS CSCD 北大核心 2010年第2期158-164,共7页 Journal of Fudan University：Natural Science
关键词 0.13μm 漏电流 单粒子效应加固 D触发器 0. 13μm leakage SEE mitigation D flip-flop
分类号 TN406 [电子电信—微电子学与固体电子学] TN432 [电子电信—微电子学与固体电子学]
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复旦学报（自然科学版）
2010年 第2期

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