摘要
研究了沉积温度对化学气相渗透ＳｉＣ基体微观结构及其碳纤维增强复合材料性能的影响。９５０℃沉积碳化硅为非晶态；１０００℃以上沉积出的碳化硅为结晶态，１０５０℃沉积碳化硅晶体以（１１１）取向为主；１２５０℃沉积碳化硅晶体以（２２０）取向为主。沉积温度升高，沉积深度和均匀性降低。制备毡基Ｃ／ＳｉＣ复合材料的沉积温度为１１００～１１５０℃；制备三维编织Ｃ／ＳｉＣ复合材料的沉积温度约为１０００～１０５０℃。
The effects of the depositing temperatures on the microstructure of CVI SiC matrix and the properties of C/SiC composites are investigated. The results show that the depositing SiC grains are amorphous at depositing temperature of 950℃, and are crystal above 1 000℃. The SiC crystals deposited at 1 050℃ and 1 250 ℃ are respectively orientated to (111) plane and (220) plane. The depositing uniformity and depth decrease with the depositing temperature increases. The optimum depositing temperature is between 1 000℃ and 1 050℃ for 3D braid C/SiC composites, and between 1 110℃ and 1 150℃ for carbon felt C/SiC composites.
出处
《固体火箭技术》
EI
CAS
CSCD
1999年第1期68-71,共4页
Journal of Solid Rocket Technology
关键词
碳化硅
化学汽相淀积
陶瓷基
复合材料
温度
silicon carbide
chemical vapor deposition
ceramic matix composites
