摘要
介绍了LF7650CMOS运算放大器在60Coγ射线、1MeV电子和4、7、30MeV不同能量质子辐照环境中的响应规律及60Coγ射线和1MeV电子辐照损伤在室温和100℃高温条件下的退火特性,探讨了引起CMOS运放在不同辐射环境中辐照响应出现差异的损伤机理,并对CMOS运放电路在不同辐射环境中表现出的与CMOS数字电路不同的响应特征给予了解释。
The CMOS operational amplifiers LF7650 were subjected to irradiation by 60Co rays, 1MeV electrons and protons of 4, 7 and 30MeV, respectively, and theradiation responses under these irradiation conditions were studied. The annealingmeasurements were also performed on the radiation damage caused by 60Co raysand 1MeV electrons at room temperature and 100 respectively. The reason whydifferent rays (in species and energies) cause different responses was discussed, andan explanation was given to the difference in response characteristics betweenCMOS analogue and digital circuits.
出处
《核技术》
CAS
CSCD
北大核心
1999年第1期42-47,共6页
Nuclear Techniques
关键词
CMOS
运算放大器
电离辐射
辐射损伤
CMOS operational amplifier, Ionizing radiation, Radiation damage