EEPROM单元抗辐射版图设计技术

The Radiation Hardened Layout Design for EEPROM Cell

随着EEPROM存储器件在太空和军事领域的广泛应用,国际上对EEPROM抗辐射性能的研究越来越多。为了达到提高存储器件抗辐射性能的目的,文章从版图设计的角度出发,首先分析了辐射对器件造成的影响,接下来分别介绍了基于FLOTOX和SONOS工艺的EEPROM器件特性,同时指出了在版图设计时需要注意的电压耦合比的问题。在设计中,利用管内隔离和管间隔离的方法,使得管内源/漏端和相邻两管源/漏端之间没有场氧介入,或是将场氧隔开,不让场区下形成漏电通道。设计出的EEPROM版图,不但满足了目前的工作需要,同时为以后抗辐射版图设计提供了有用的参考。

As wide applications of EEPROM memory devices in space and military field, more and more researches focus on its radiation hardened characteristics in internationally. To improve the radiation hardened performance of EEPROM memory and meet the needs of special application, we analyzed the effects and mecha- nism of radiation on EEPROM device in angle of layout design, firstly. Then we introduced the characteristics on the basis of FLOTOX and SONOS technologies, respectively. And we must pay attention to the compare- coupled of voltage when we designed the layout. In this design, we used the isolation in the one cell and between two cells to prohibit the leakage current under the filed-oxide. The designs not only satisfied the needs of present work, but supply a wrathful reference for radiation hardened layout design in future.