Ar＋与氟化的Si样品相互作用机制的研究：分子动力学模拟

Study of Ar Ion Etching Mechanisms of Fluorinated Si Surfaces:Molecular Dynamics Simulation

采用分子动力学方法模拟了Ar+与表面含有C,F反应层的Si样品的相互作用过程,以了解Ar+与氟化的Si的作用机制。为了和相对应的实验结果做比较,选择了两种样品,表面富F样品和表面富C样品。模拟结果表明,对于表面富F样品,能清楚地看到Si的刻蚀且随着入射能量的增加Si的刻蚀增加。当入射Ar+数量到达一定程度后Si的刻蚀完全停止。对于富C样品,几乎没有发生Si的刻蚀,这是由于Si-C键对Si的刻蚀起阻碍作用。

The Ar＋ ion bombardment of the fluorinated silicon surfaces was simulated with classical molecular dy- namics to understand the mechanisms of argon ion etching of the silicon surfaces. In the simulation, both F-rich and C-rich samples were considered. The impacts of the sputtering conditions, including the Ar＋ ion incident energy, the microstruc- tures, and impurity contents of the reactive layers of Si, were experimentally studied and simulated. The results show that theetching rate depends on the surface contents. For F-rich sample, silicon etching rate increases with an increase of inci- dent energy of Ar ＋ ion. After some argon ion exposure, the etching came to a stop. In contrast,almost no Si atoms etching was observed for the C-rich sample. We conclude that formation of silicon carbide may significantly resist the Si atoms etching.