摘要
在室温下,采用直流磁控溅射方法制备了不同厚度的氧化锌掺铝薄膜,并对样品进行了快速退火处理,退火温度为600℃,时间为60 s。研究了退火前后薄膜的结构、光电特性的变化情况。退火后,薄膜的最小电阻率为4.2×10-4Ω.cm,其透过率为90.1%。禁带宽度由退火前的3.68 eV变为3.75 eV。
The ZnO films with different thickness were grown by DC magnetron sputtering, and doped with 99.95 % alumina on glass substmtes at room temperature. The dosage of alumina was 3.0% (wt). The impacts of film growth conditions, including the sputtering power, annealing temperature, annealing time, and pressure, were studied. The microstructures and electronic properties of the Al-doped ZnO (AZO) films were characterized X-ray diffraction and conventional probes. The results show that the rapid annealing in vacuum at a temperature of 600℃ for 60s, significantly improves the microstnactures and properties of the AZO films. For instance, the rapid annealing minimizes its resistivity to 4.2 × 10-4Ω. cm, increases its average transmittance to 90.1%, and widens its band gap from 3.68eV to 3.75eV.
出处
《真空科学与技术学报》
EI
CAS
CSCD
北大核心
2010年第3期302-305,共4页
Chinese Journal of Vacuum Science and Technology
基金
国家自然基金资助项目(60676041)
山东省自然基金资助项目(Y2008A37)
关键词
快速退火
直流磁控溅射
AZO薄膜
光电特性禁带宽度
Rapid thermal annealing, DC magnetron sputtering,AZO films, Photoelectrical properties, Band gap