快速退火对直流磁控溅射法制备的AZO薄膜性能的影响

Rapid Annealing and Property Improvement of DC Magnetron Sputtered Al-Doped ZnO Films

在室温下,采用直流磁控溅射方法制备了不同厚度的氧化锌掺铝薄膜,并对样品进行了快速退火处理,退火温度为600℃,时间为60 s。研究了退火前后薄膜的结构、光电特性的变化情况。退火后,薄膜的最小电阻率为4.2×10-4Ω.cm,其透过率为90.1%。禁带宽度由退火前的3.68 eV变为3.75 eV。

The ZnO films with different thickness were grown by DC magnetron sputtering, and doped with 99.95 % alumina on glass substmtes at room temperature. The dosage of alumina was 3.0% （wt）. The impacts of film growth conditions, including the sputtering power, annealing temperature, annealing time, and pressure, were studied. The microstructures and electronic properties of the Al-doped ZnO （AZO） films were characterized X-ray diffraction and conventional probes. The results show that the rapid annealing in vacuum at a temperature of 600℃ for 60s, significantly improves the microstnactures and properties of the AZO films. For instance, the rapid annealing minimizes its resistivity to 4.2 × 10-4Ω. cm, increases its average transmittance to 90.1%, and widens its band gap from 3.68eV to 3.75eV.