YAG激光切割单晶硅的工艺研究

Research of the Cutting Technology on Silicon Wafer by YAG Laser

通过实验研究了YAG激光切割单晶硅的工艺,分析了激光功率、切割速度、辅助气体以及焦点位置对最终切割质量的影响,并对存在的问题提出了改进的建议及方法,为实际应用中参数设置和工艺改进提供了参考,使激光切割工序取得良好的效果。

Cutting technology on silicon wafer by YAG laser is experimentally investigated. Influences of laser power, cutting velocity, assistant gas and fatal point on the final cutting quality are analyzed. Suggestions and methods of improvement for the subsistent problems are further proposed, which provides a reference for the parameter set and technology amelioration in applications, and making the laser-cutting procedure achieve good effect.