掺Al对TaN薄膜微结构及电性能的影响

Influences of Aluminum Doping on the Micro-Structures and Electrical Properties of TaN Thin Films

采用反应直流磁控溅射法在Al2O3陶瓷基片上制备TaAlN薄膜,通过调节复合靶Al/Ta面积比调节Al掺杂量,研究了Al/Ta面积比对TaAlN薄膜微结构及电性能的影响。XRD结果表明,TaN薄膜中掺杂Al可在2θ为38.5°和65.18°处分别有立方结构的AlN(101)和AlN(202)相出现。随Al/Ta面积比的增大,TaAlN薄膜的沉积速率、电阻率、方阻以及TCR绝对值逐渐增大。当Al/Ta面积比为零时,TaN薄膜的电阻率和TCR绝对值分别为247.8μΩ·cm和12 ppm/℃,当Al/Ta面积比增大到29%时,TaAlN薄膜的电阻率和TCR绝对值分别增大到2560μΩ·cm和270 ppm/℃。

TaAlN thin films were deposited on Al2O3 substrates by reactive DC magnetron sputtering.The content of Al doping in TaN thin films was controlled by adjusting Al/Ta area ratios of the composite target.The influences of Al/Ta area ratios on the micro-structures and the electrical properties of the samples were investigated in detail.The X-ray diffraction（XRD） results show that AlN（101） and AlN（202） phases precipitate out at 2 θ of 38.5° and 65.18° in aluminum doping TaN films,respectively.With the increase of the Al/Ta area ratios,the deposition rate,resistivity and the absolute value of temperature coefficient of resistance（TCR） of the samples increase gradually.When the Al/Ta area ratio is zero,the resistivity and the absolute value of the TCR of the samples are 247.8 μΩ·cm and 12 ppm/ ℃,respectively.However,with the increase of the Al/Ta area ratio up to 29%,the resistivity and the absolute value of the TCR of the samples are increased to 2 560 μΩ·cm and 270 ppm/ ℃,respectively.