负微分电导下晶闸管的动力学行为与混沌现象

Dynamic behavior of negative differential conductivity and chaotic phenomena in Si thyristor

研究了晶闸管处于负微分电导状态下的非线性动力学行为,推导了晶闸管动力学系统不稳定需满足的边界条件,解释了晶闸管混沌现象产生机理.建立了晶闸管的非线性动力学方程,分析了该动力学方程的线性稳定性.在此基础上根据Jacobi矩阵得到了系统不稳定需满足的边界条件,指出晶闸管的混沌行为并非只由负微分电导特性引起,还与外界条件和器件本身物理参数等因素有关.最后,通过数值仿真和实验研究证实了理论分析的正确性,从而完整地解释了晶闸管的倍周期分岔和混沌行为.

Stability and dynamic behavior of negative differential conductivity in thyristors are studied in this paper,which aims to clarify the mechanism of chaotic phenomena in the thyristor. Firstly,a spatio-temporal model of the thyristor is established,and the boundary condition of the system is obtained based on the linear stability analysis. The results show that the instability of thyristor is not only determined by the characteristics of negative differential conductivity,but also depends on the external conditions. Computer simulation is made to verify the proposed view for different external control parameters. The theoretical results are also confirmed by experimental measurements. So,the mechanism of chaotic phenomena in thyristor is clearly explained.