电场调谐InAs单量子点的发光光谱

Tuning photoluminescence of single InAs quantum dot by electric field

采用稳态和时间分辨发光光谱,研究了生长在p-i-n二极管结构内的InAs单量子点发光光谱的电场调谐特性.随着电场强度的增加,观察到量子点中激子发光的Stark效应.通过选择不同波长的激光线激发量子点样品,发现随着电场强度的增加导致量子点发光强度的减弱,这是由于量子点俘获载流子概率的减小所致,而激子寿命的增加源于电场导致激子的Stark效应.

By using photoluminescence （PL） and time-resolved PL spectra,the optical properties of single InAs quantum dot （QD） embedded in the p-i-n structure have been studied under an applied electric field. With the increasing of electric field,the exciton lifetime increases due to the Stark effect. We noticed that the decrease or quenching of PL intensity with increasing the electric field is mainly due to the decrease of the carriers captured by QD.