摘要
采用射频化学气相沉积法,制备了一系列具有不同晶化率n型掺杂层的n-i-p结构微晶硅薄膜太阳电池.发现本征层的结构很大程度上依赖于n型掺杂层的结构,特别是n/i界面处的孵化层厚度以及本征层的晶化率.该系列太阳电池在100mW/cm2的白光下照射400h,实验结果证实了本征层晶化率最大(Xc(i)=65%)的电池性能表现出最低的光致衰退率.拥有非晶/微晶过渡区n型掺杂层的电池(本征层晶化率Xc(i)=54%)分别被白光、红光和蓝光照射,经过400h的光照,发现红光下电池性能仅有2%的衰退,蓝光下衰退率约为8%.
A series of n-i-p microcrystalline silicon thin film solar cells with different values of crystalline volume fraction Xc of n-type layers are prepared by radio frequency plasma enhanced chemical vapor deposition. It is found that the structure of intrinsic layer is strongly dependent on the structure of n-type layer,especially the incubation layer thickness at n/i interface and Xc of intrinsic layer. This series of solar cells were light-soaked under 100 mW/cm2 for 400 h. The experiment results demonstrate that the solar cell with the highest Xc of intrinsic layer ( Xc ( i) = 65% ) has the lowest light-induced degradation ratio. Then the solar cell with n-type layer deposited in an amorphous silicon/microcrystalline silicon transition region (Xc(i) = 54% ) is light-soaked under the irradiations of white light,red light and blue light with the same light intensities,separately. After 400 h light-soaking,the light degradation ratio is only 2% for the red light irradiation,while it is 8% for the blue light irradiation.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
2010年第6期4330-4336,共7页
Acta Physica Sinica
基金
国家重点基础研究发展计划(批准号:2006CB202602
2006CB202603)
科学技术部国际科技合作计划(批准号:2009DFA62580)
国家高技术研究发展计划(批准号:2009AA050602)
天津市国家科技计划配套基金(批准号:07QTPTJC29500)资助的课题~~
关键词
微晶硅
n-i-p结构太阳电池
光致衰退
晶化率
microcrystalline silicon
n-i-p solar cells
light-induced degradation
crystalline volume fraction