集成电路微互连结构中的热迁移

Thermomigration in micro interconnects in integrated circuits

高工作电流在集成电路微互连结构中产生大量焦耳热,引起局部区域的温升、形成高温度梯度,金属原子沿着温度梯度反向运动发生热迁移.热迁移是集成电路微互连失效的主要原因之一.阐述了热迁移原理、失效模式及原子迁移方程.综述和分析了在单纯温度场、电场和温度场耦合等不同载荷条件下金属引线和合金焊料的热迁移研究.归纳并提出了集成电路微互连结构热迁移研究亟待解决的问题.

With the reduction of feature size of integrated circuits,higher current density has been introduced in electronic devices which produces a significant Joule heating effect. This also brings about an increase of the temperature which induces a very high temperature gradient in some local regions of micro interconnects. As a result,thermomigration will occur and metal atoms will move opposite to the direction of the temperature gradient. Thermomigration is one of common modes in reliability failures in electronic devices. This paper reviews and analyzes the previous researches on the thermomigration theory and experiment in stripe and solder interconnects under the temperature loading and the current/temperature loading. The challenges of thermomigration are discussed for interconnects in electronic devices in the future.