摘要
采用射频磁控溅射法,在单面抛光的Si(111)衬底上制备了PbTe薄膜,利用X射线衍射法分析了溅射工艺参数如溅射功率、溅射时间、衬底温度以及退火温度对PbTe薄膜的结晶质量的影响。结果表明:在溅射功率为30W,溅射时间为10 min,衬底未加热时制备的薄膜具有最好的〈100〉方向的择优取向性;退火处理可以改善薄膜的结晶质量,并且退火温度越高,薄膜的结晶质量越好。
PbTe thin films were deposited on polished Si（111） substrates by radio frequency（RF） magnetron sputtering.The influence of sputtering parameters such as sputtering power,sputtering time,substrate temperature and annealing temperature on their crystallization quality was investigated by X-ray diffraction（XRD）.The results showed that the thin films deposited with 30 W sputtering power for 10 min on not heated substrate had a strong〈100〉preferred orientation and best quality.The crystallization of thin films can be further improved by subsequent annealing and the higher annealing temperature,the better crystallization quality.
出处
《理化检验（物理分册）》
CAS
2010年第5期288-291,共4页
Physical Testing and Chemical Analysis(Part A:Physical Testing)
