期刊文献+

氧分压对BiFeO_3薄膜能带结构和折射率的影响及其光学表征 被引量:2

The influence of oxygen partial pressure on the energy band and refractive index of BiFeO_3 thin films grown by RF-magnetron sputtering and its optical characterization
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摘要 采用射频磁控溅射在玻璃衬底上制备了BiFeO3薄膜,通过透射光谱和椭圆光谱研究了氧分压对BiFeO3薄膜能带结构及光学性能的影响。结果表明,BiFeO3薄膜在近红外区具有良好的透射性,透射率均在80%以上,其禁带宽度Eg=(2.79±0.03)eV。随着氧分压的增大,BiFeO3薄膜中氧缺陷及氧缺陷能级减少,导致透射率和禁带宽度均增大。同时发现,OJL色散模型与Cauchy色散模型的叠合能够对BiFeO3薄膜的椭圆光谱进行很好的描述。 Multiferroic BiFeO3 thin films were prepared on glass substrates by radio frequency magnetron sputtering.The effect of O2 partial pressure on the energy band and the optical properties of BiFeO3 thin films have been studied by transmission spectra and ellipsometric spectra.The results reveal that the transmittance of BiFeO3 thin films is more than 80%,and the band gap of BiFeO3 thin films is Eg=(2.79±0.03)eV.The oxygen defects and defect levels of BiFeO3 thin films decrease with increment of O2 partial pressure,which results in the increasing of the transmittance and energy gap Eg.It is also found that the cauchy-OJL dispersion model can explain spectroscopic ellipsometric data in our films.
出处 《功能材料》 EI CAS CSCD 北大核心 2010年第5期899-902,共4页 Journal of Functional Materials
基金 国家自然科学基金资助项目(50331040 50702046) 西北工业大学基础研究基金资助项目(JC200821) 西北工业大学研究生创业种子基金资助项目(Z200968)
关键词 多铁材料 椭圆光谱 OJL色散模型 multiferroic material spectroscopic ellipsometry OJL dispersion model
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参考文献21

  • 1Wang J, Neaton J B, Zheng H, et al. [J]. Science, 2003, 299: 1719-1722.
  • 2Li S, Lin Y H, Nan C W, et al.[J].J Appl Phys, 2009,105 (5) . 4310-4314.
  • 3Wang Y P, Zhou L, Liu J M, et al.[J]. Appl Phys Lett, 2004,84 : 17:31-1733.
  • 4杨彩霞,林殷茵,汤庭鳌.溶胶-凝胶法制备BiFeO_3铁电薄膜的结构和特性[J].功能材料,2005,36(3):340-342. 被引量:14
  • 5Ma Y,Chen X M. [J]. J Appl Phys,2009, 105(5) :4107- 4111.
  • 6Zhu W M,Guo H Y,Ye Z G. [J]. Phys Rev B,2008,78 (1) . 4401-4410.
  • 7Fiebig M, Lottermoser T, Frohlich D, et al. [J]. Nature, 2002,419.818-820.
  • 8Kimura T, Goto T, Shintani H, et al. [J]. Nature, 2003, 426:55-58.
  • 9Kubel F, Schmid H. [J]. Acta Crystallogr Sect B: Struct Sci, 1990,46 : 698-702.
  • 10Kiselev S V, Ozerov R P, Zhdanov G S. [J]. Sov Phys Dokl, 1962,7 : 742.

二级参考文献12

  • 1Swartz S L, Wood V E. [J]. Condensed Matter News,1992,15:4-7.
  • 2Evans J T, Womack R. [J]. IEEE J Solid State Circuits,1988,23: 1171-1175.
  • 3Fischer P, Polomska M, Sosnowska I,et al. [J]. J Phys,1980,13:1931.
  • 4Borovik-Romanov A S, Ozhogin V I. [J]. Soy Phys JETP,1960, 12: 18-20.
  • 5Wang Y P, Zhou L, Zhang M F, et al. [J]. Appl Phys Lett, 2004,84: 1731-1733.
  • 6Mukherjee J L, Wang F Y. [J]. J Amer Ceram Soc,1971,54: 31-33.
  • 7Teague J R, Gerson R, James W J. [J]. Solid State Commun, 1970,8: 1073-1075.
  • 8Mahesh Kumar M, Palkar V R. [J]. Appl Phys Lett,2000,76: 2764-2766.
  • 9Wang J, Neaton J B, Zheng H, et al. [J]. Science vol,2003,299: 1719-1721.
  • 10Palkar V R, John J, Pinto R. [J]. Appl Phys Lett,2002, 80: 1628-1630.

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