单根CuTCNQ纳米线的电学开关特性

Electrical switching property of single CuTCNQ nanowire

用溶液法制备了CuTCNQ纳米线。用X射线衍射(XRD)和扫描电子显微镜(SEM)表征了样品的结构及形貌,用拉曼光谱(Raman)研究了CuTC-NQ纳米线的电荷转移情况。研究了其不同温度下的电学特性。CuTCNQ纳米线的长度为1～8μm,直径50～300nm。XRD结果显示制备得到的CuTCNQ为Ⅰ相。研究表明,在外加电场作用下,单根CuTCNQ纳米线表现出可逆的电开关特性,阻态转变前后其电阻的变化达3个数量级。高低阻态转变电场阈值约为1.8V/μm。另外,CuTCNQ纳米线的电阻随着温度的降低而增大,当温度低于临界值160K时,低阻态的CuTCNQ纳米线将出现负阻效应。

CuTCNQ nanowires were prepared by solution method.The morphology and structure were characterized via X-ray diffraction （XRD） and scanning electron microscopy （SEM）.The results show that the as-obtained nanowires are phase I single-crystal,with lengths ranging from 1 to 8μm,and diameters ranging from 50 to 300nm.The electrical switching characteristics of single nanowire were studied.Current-voltage characteristics of CuTCNQ exhibited a clear reversible switching thresh-old from high resistance to low resistance state with on-off ratio of three orders of magnitude.The resistance of the nanowire increases with decreasing temperature.Negative resistance effect occurs when temperature is below 160K.