摘要
采用变温霍尔效应方法测量了浅掺杂n型锗薄膜的半导体电学特性。根据77K^400K温度范围内的变温霍尔效应测量,通过对实验数据曲线的分析,由lg(|RH|)-1/T曲线高温本征导电温区的斜率计算得到样品禁带宽度Eg=0.75eV,由lg(|RH|T3/4)-1/T低温杂质电离区的曲线斜率得到施主杂质电离能为Ei=0.012eV。
The experimental principle and method of Temperature-Dependent Hall measure- ment for electrical properties of semiconductors was introduced. As an example, a shallow As- doped n-Ge sample was measured in a range of 77K-400K. The analysis from the data curves depending on temperature indicates that the band gap is 0. 75eV from lg（｜Rn｜）-1/T curve. The donor impurity ionization energy is 0. 012eV from lg（｜RH｜ T3/4）- 1/T curve. All the results are good agreement with the reference value.
出处
《信息记录材料》
2010年第3期56-59,共4页
Information Recording Materials
关键词
浅掺杂n型锗薄膜
变温霍尔效应
禁带宽度
杂质电离能
shallow n-Ge sample
temperature-dependent hall measurement
band gap
donor impurity ionization energy
