摘要
Piezoelectric effects and electronic structures of InAs/GaAs quantum dots grown along （111） and （011） directions are investigated in this paper. The finite element method is used. Electronic energy levels are calculated by solving the three-dimensional effective mass Schrodinger equation including a strain modified confinement potential and piezoelectric effects. The difference in electronic structure between quantum dots grown along the （111） direction and the （011） direction are compared. The cubic and truncated pyramidal shaped quantum dots are adopted.
Piezoelectric effects and electronic structures of InAs/GaAs quantum dots grown along （111） and （011） directions are investigated in this paper. The finite element method is used. Electronic energy levels are calculated by solving the three-dimensional effective mass Schrodinger equation including a strain modified confinement potential and piezoelectric effects. The difference in electronic structure between quantum dots grown along the （111） direction and the （011） direction are compared. The cubic and truncated pyramidal shaped quantum dots are adopted.
基金
Project supported by the National High Technology Research and Development Program of China (Grant No.2009AA03Z405)
the National Natural Science Foundation of China (Grant Nos.60908028 and 60971068)
