离子注入制备Si_xMn_(1-x)稀磁半导体的X射线衍射

XRD study on Si_xMn_(1-x) diluted magnetic semiconductors prepared by ion implantation

把1×1016/cm2的200keVMn离子注入p型Si单晶(100)片中,在N2气氛下进行600℃、700℃、800℃和900℃退火,制得SixMn1-x稀磁半导体。用同步辐射X射线衍射技术研究样品结构,发现Mn的注入和退火导致了Si结晶颗粒的产生,随退火温度升高,间隙位的Mn原子逐渐减少,替代位的Mn原子增加,同时晶格发生膨胀。间隙位和替代位Mn原子间的相互作用导致样品的铁磁性增强。

SixMn1-x diluted magnetic semiconductors （DMS） were prepared by implanting 200 keV Mn ions into p-Si（100） wafers and annealing them at 600℃, 700℃, 800℃ or 900℃ under N2 atmosphere. The samples were studied by means of synchrotron radiation X-ray diffraction at SSRF （Shanghai Synchrotron Radiation Facility）. It was found that the Mn implantation and thermal annealing resulted in appearance of silicon crystalline particles, At increasing annealing temperatures, the number of Mn atoms on interstitial sites decreased gradually while those on substitution sites increased. And the crystal lattice expanded, too. Interaction of Mn atoms between interstitial and substitution sites increased the ferromagnetism of SixMn1-x DMS samples.