摘要
为了使半导体激光泵浦Nd∶YVO4固体激光器能获得大功率、高光束质量、线偏振的激光输出,利用PICS3D软件设计了InGaAs/GaAs应变量子阱结构,制作了发射波长为880 nm的大功率半导体激光器列阵。该激光器列阵激射区单元宽为100μm,周期为200μm,填充因子为50%,激光器列阵CS封装模块室温连续输出功率达60.8 W,光谱半高全宽(FWHM)为2.4 nm。为进一步改善大功率半导体激光器列阵的光束质量,增加半导体激光端面泵浦功率密度,采用阶梯反射镜组对880 nm大功率半导体激光器列阵进行了光束整形,利用阶梯镜金属表面反射率受近红外波长变化影响小的特点,研制出高稳定性、大功率光纤耦合模块。模块输出功率为44.9 W,光-光耦合效率达73.8%,尾纤芯径Φ为400μm,数值孔径(NA)为0.22。
An InGaAs/GaAs strained quantum well structure semiconductor laser diode with an emission wavelength of 880 nm was grown to achieve linear polarized laser outputs with high powers and better beam quality.Based on the PICS 3D software,Laser Diode Arrays(LDA) with a stripe width of 100 μm and filling factor of 50% was fabricated.The output power of 1 cm bars on conductively cooled package with continuous wave(CW) reaches to 60.8 W at a current of 70 A,the threshold current is 11.1 A and the peak wavelength is 878 nm with a Full Width Half Maximum(FWHM)of 2.4 nm.To improve the beam quality and increase the end pumping power of the DLA,a pair of micro step-mirrors were developed to shape the laser beams come from the high power DLA,and then a high power optical fiber couple module was developed.Results show that the couple module with a core diameter of 400 μm and a Number Aperture(NA) of 0.22 can offer the output power of 44.9 W and couple efficiency of 73.8%.
出处
《光学精密工程》
EI
CAS
CSCD
北大核心
2010年第5期1021-1027,共7页
Optics and Precision Engineering
基金
中科院长春光学精密机械与物理研究所三期创新工程资助项目
吉林省与中科院院地合作项目(No.2007SYHZ0030)
科技部国际合作项目(No.2006DFA12600)
吉林省长基金资助项目
中国科学院知识创新工程领域前沿项目