摘要
文章用RF-PECVD设备制备了G-SiNx薄膜,研究了TFT器件击穿电压的测定与分析方法,并对成膜条件中的SiH4流量以及G-SiNx膜厚进行浮动变化,以及研究TFT器件击穿电压的变化方式。结果表明:随着SiH4/NH3流量增大,其耐压性降低;增大绝缘膜厚度,耐压性随之增大。文章对TFT耐压性测量方法的探讨以及PECVD工艺条件与耐压性的相关关系的研究,对于制备合格的氮化硅薄膜提供了借鉴与指导。
The hydrogenated amorphous silicon nitride （a-SiNx：H） thin films were produced in a RF plasma-enhance chemical vapor deposition system. Adjusting SiH4 gas flow rate and SiNx film thickness, the withstand voltage properties were studied. The withstand voltage decreases with increasing the SiH4 gas glow, and decreasing the SiNx thickness. The studies on TFT transistor withstand voltage measurement method, and the PECVD process experiment relation with withstand voltage, can be used for reference and practical guidance to fabricating qualified TFT G-SiNx film.
出处
《现代显示》
2010年第6期42-45,共4页
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关键词
TFT
G-SiNx
电学测量
耐压性
TFT
G-SiNx
electrical measurement
withstand voltage properties
