摩擦化学反应活化能在SiO_2-CMP中的作用

The Role of Friction Chemical Reaction Activation Energy in SiO_2-CMP

基于摩擦化学反应动力学,在修正阿伦尼乌斯公式的基础上,建立了考虑摩擦效应在内的化学反应速率方程,并建立SiO2介质膜化学机械抛光总材料去除率模型;同时,通过浸泡、变温抛光试验确定了材料去除模型.研究结果表明,在化学机械抛光(CMP)过程中,因为反应速率对温度的依赖程度降低,摩擦产生的机械能除了部分转化为热能等其他形式的能,绝大部分直接转化为化学能,即直接降低了化学反应活化能,从而提高了反应速率;纯化学作用和纯机械作用在整个CMP去除量中所占比重很小,可以忽略不计;不同浓度通过对摩擦力和活化能降低量的影响,从而影响了温度和抛光效果的相关性,活化能降低量与摩擦力基本呈线性关系.

Considering friction chemical reaction dynamics and the Arrhenius formula amended,the chemical reaction rate equation including the friction effect was established. The total material removal rate model of chemical mechanical polishing（ CMP） silicon dioxide inter-level dielectric was obtained. At the same time,the material removal model was confirmed through immersion tests and polishing tests in different temperatures. The results show that as the dependence of reaction rate on temperature decreases,the majority of mechanical energy generated by the friction is directly converted into chemical energy in addition to heat energy and some other forms of energy in the CMP process,which directly reduces the activation energy of chemical reaction,significantly improves the reaction rate. Purely chemical and purely mechanical roles are in a very small share in the entire amount of CMP,which can be negligible. The different concentrations affect the friction force and the reduction of activation energy,which affect the relevance of temperature and polishing results. Moreover,the reduction of activation energy is basic linear with friction force.