硅基集成电路中Cu互连阻挡层的研究

Investigation of Barrier Layer for Cu Interconnection on Si-based Integrate Circuit

随着集成电路向超大规模的发展,Cu互连技术已成为硅工艺领域的热点话题,其关键技术之一——扩散阻挡层的研究越来越受到人们的关注。结合课题组阻挡层的研究工作,介绍了当前Cu互连技术中难熔金属及其氮(碳、硅、氧)化物、多层膜、三元化合物等各类扩散阻挡层材料的研究发展现状,论述了阻挡层的厚度问题、阻挡层研究过程中的分析表征方法以及当前Cu互连的理论研究现状,归纳并分析了阻挡层的失效机制。

With the development of ULSI, Cu interconnection has been the focus of the craft of Si. The diffusion barrier layer research, one of the key steps, has been attracted extensively. Coupled with our work, the research of various diffusion barrier materials for Cu interconnection is described, including refractory metals and their nitrides （carbides, silicides, oxides）, muhilayered films, ternary materials and so on. Moreover, some rela-ted problems of this field are discussed, such as the barrier thickness, analysis methods, present theoretical effort and failure mechanics.