Ⅱ-VI族半导体特性参数的三维边缘元分析

3-D EDGE-ELEMENT ANALYSIS FOR THE CHARACTERISTIC PARAMETERS OF II-VI SEMICONDUCTOR MATERIALS

本文用三维边缘元方法分析了电导率为张量的有间隙Ⅱ-Ⅵ族半导体材料的散射特性;给出了散射参数与半导体特性参数之间的关系曲线并说明了用这些曲线确定Ⅱ-Ⅵ族半导体电特性参数的方法。该方法直接从泛函变分出发,避开了其它方法中求解有损超薄各向异性介质填充波导本征值问题的困难,简化了求解过程。计算结果与实验值的比较证实了本方法具有有效、可靠和精确的特点。

The scattering characteristics of Ⅱ-Ⅵ semiconductor materials with tensor conductivity resulting of the Hall-effect, filled in waveguide with gaps are analyzed with 3-D edge-element. Some useful curves are given and the procedure of determining mobility and carrier concentration of Ⅱ-Ⅵsemiconductor materials with these curves is described. Since this method starts from the functional variation directly, it avoids the difficulty, met in the other methods, of solving the eigenvalue problem for very thin lossy isotropic dielectric loaded waveguide. The experimental results confirm the effectiveness, reliability and accuracy of the approach.