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Ca-B-Si掺杂对Ba(Mg_(l/3)Nb_(2/3))O_3陶瓷介电性能的影响 被引量:2

Effect of Ca-B-Si glass doping on the microwave dielectric properties of Ba(Mg_(l/3)Nb_(2/3))O_3 ceramics
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摘要 采用传统电子陶瓷工艺合成了Ca-B-Si(CBS)玻璃掺杂的Ba(Mgl/3Nb2/3)O3微波介质陶瓷,研究了CBS掺杂量对陶瓷微波介电性能的影响。结果表明:CBS掺杂可促进陶瓷烧结并提高B位1:2有序度,进而降低微波介质损耗。当w(CBS)=3%时,陶瓷烧结温度由纯相时的1 500℃以上降至1 250℃,表观密度提高到6.32 g/cm3以上,陶瓷的微波介电性能达到最佳值:εr=26,Q.f=67 800 GHz(8 GHz),τf=25×10–6/℃。该陶瓷有望成为用于高频段微波器件的材料。 Ca-B-Si(CBS) glass doped Ba(Mgl/3Nb2/3)O3(BMN) microwave dielectric ceramics were prepared using the conventional electronic ceramic process.The effects of CBS doping amount on the microwave dielectric properties of BMN ceramics were studied.The results show that an improvement of sintering ability and 1:2 ordering degree of B-site is found in BMN ceramic,which results in the decreasing of microwave dielectric loss.In comparison with pure BMNceramics,the the BMN ceramic doped with 3%(mass fraction) CBS shows a lower sintering temperature decreasing from 1 500 ℃ above to 1 250 ℃,a higher apparent density of 6.32 g/cm3 above,and the best microwave dielectric properties of εr = 26,Q.f =67 800 GHz(8 GHz)and τf = 25×10–6/ ℃.That makes it a very promising material to be applied in high frequency microwave device.
出处 《电子元件与材料》 CAS CSCD 北大核心 2010年第1期22-24,共3页 Electronic Components And Materials
基金 四川省青年基金资助项目(No.JS0303001)
关键词 微波介质陶瓷 Ba(Mgl/3Nb2/3)O3 Ca-B-Si掺杂 微波介质损耗 microwave dielectric ceramic Ba(Mgl/3Nb2/3)O3 Ca-B-Si doping microwave dielectric loss
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