同质缓冲层厚度对掺铝氧化锌薄膜性能的影响

Effect of homo-buffer layer thickness on the properties of Al-doped ZnO films

室温下,采用射频磁控溅射法在玻璃衬底上制备具有同质缓冲层的ZnO∶Al(AZO)薄膜。用X射线衍射仪、紫外-可见分光光度计、四探针探测仪等对薄膜的结构和光电性能进行了研究。结果表明:当薄膜总厚度为400 nm时,制备具有66 nm同质缓冲层的AZO薄膜的方块电阻为26Ω.□–1,与单层AZO(400 nm)薄膜的方块电阻(63Ω.□–1)相比,下降了59%,其在可见光范围内的平均透过率为91%。

Al-doped zinc oxide（AZO） films with homo-buffer layer were deposited by RF magnetron sputtering on glass substrates at room temperature.The opto electronic properties and structure of films were analyzed by using X-ray diffraction instrument,etc.The results show that the AZO（400 nm） film without buffer layer has a sheet resistance of 63 Ω.□–1,and the glass/AZO（66 nm）/AZO（334 nm） film shows a sheet resistance of 26 Ω.□–1 and an average transmittance of 91% in the visible range.Comparing with AZO film without buffer layer,the AZO film with homo-buffer layer of 66 nm decreases by 59% in sheet resistance.