Sr(Zr_(0.1)Ti_(0.9))O_3缓冲层厚度对PZT薄膜结晶及性能的影响

Effects of Sr(Zr_(0.1)Ti_(0.9))O_3 buffer layer thickness on the crystallization and properties of PZT thin films

采用sol-gel法制备了具有Sr(Zr0.1Ti0.9)O3缓冲层的PbZr0.52Ti0.48O3(PZT)薄膜,研究了缓冲层厚度对样品结晶和性能的影响。结果表明,较薄缓冲层会诱导PZT薄膜的(111)择优取向,添加单层缓冲层(约20nm)使其(111)取向度提高到90%;较厚缓冲层会抑制PZT薄膜的(111)择优取向,添加四层缓冲层(约80nm)使其(111)取向度降低到9%;缓冲层厚度对样品电性能有显著影响,其剩余极化强度由无缓冲层时的26.8×10–6C/cm2增加到缓冲层厚度约为20nm时的38.8×10–6C/cm2。

PbZr0.52Ti0.48O3 （PZT） thin films with Sr（Zr0.1Ti0.9）O3 buffer layer were prepared using the sol-gel method. The effects of different buffer layer thicknesses on the crystallization and properties of prepared samples were investigated. The results show that （111） preferred orientation of PZT thin films is induced with a thinner buffer layer, while it is inhibited with a thicker buffer layer, that is, （111）-orientation degree decreases with the increasing of buffer layer thickness. （111）-orientation degree is 90% with single-layer buffer layer （about 20 nm）, while it is only 9% with four-layer buffer layer （about 80 nm）. The electrical properties of the samples vary with the buffer layer thickness obviously. The remanent polarization of the sample increases from 26.8×10–6 C/cm2 to 38.8×10–6 C/cm2 with the increasing of buffer layer thickness from 0 nm to about 20 nm.