溅射功率对Zr,Al共掺杂ZnO薄膜结构和性能的影响

Effects of sputtering power on the structure and photoelectrical properties of Zr,Al co-doped ZnO thin films

室温下,采用直流磁控溅射法,在载玻片衬底上制备出了Zr,Al共掺杂ZnO(AZZO)透明导电薄膜。研究了溅射功率对薄膜的组织结构、表面形貌和光电学性能的影响。结果表明,制备的AZZO透明导电薄膜为六角纤锌矿结构的多晶薄膜,且具有c轴择优取向。当溅射功率为150W时,薄膜电阻率达到最小值1.66×10–3Ω·cm,在可见光区平均透过率超过93%。

Transparent conducting Zr, Al co-doped ZnO （AZZO） thin films were deposited on slide glass substrate by DC magnetron sputtering at room temperature. The effects of sputtering power on the structure, surface morphology and photoelectrical properties of ZnO thin films were studied. The results show that all the prepared AZZO films are polycrystalline films with hexagonal wurtzite structure and a c-axis preference. When the applied sputtering power is 150 W, the resistivity of prepared films reaches the smallest value of 1.66×10–3Ω·cm, and the average transmittance in the visible region is beyond 93%.