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高脉冲功率密度复合磁控溅射电源研制及放电特性研究 被引量：27

Development and discharge behavior of high power density pulse magnetron sputtering system
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摘要 高功率脉冲磁控溅射技术(HPPMS)由于能够产生较高的离化率而受到人们的重视。为了提高离化率/沉积速率协同效应,基于直流和脉冲耦合叠加技术我们研制了高功率密度复合脉冲磁控溅射电源,并对高功率复合脉冲磁控溅射放电特性进行研究。结果表明脉冲峰值电流随脉冲电压的增加而增加,但随着脉冲宽度的增加而减小。在高功率脉冲期间工件上获得的电流可以增加一个数量级以上,表明磁控离化率得到显著增强。 As a new technology with high ionization rate of sputtered materials,the HPPMS（high power pulse magnetron sputtering） system has been investigating widely.A new-type hybrid HPPMS system was developed coupling DC with pulse power supply in parallel so as to get both the high deposition efficiency and high ionization rate.Then,the discharge behavior of HPPMS system was investigated,and the results revealed that the peak pulse current increases with pulse voltage but decreases with increasing pulse duration.During pulse high-power discharge,the substrate current may increase by over an order of magnitude,ie.,the ionization rate is substantially enhanced.
作者 田修波 吴忠振 石经纬 李希平 巩春志 杨士勤
机构地区 哈尔滨工业大学现代焊接生产技术国家重点实验室等离子体表面技术与设备研究所
出处 《真空》 CAS 北大核心 2010年第3期44-47,共4页 Vacuum
关键词 高功率脉冲复合磁控溅射 峰值电流 放电特性 hybrid HPPMS peak current discharge characteristics
分类号 O484 [理学—固体物理] TB43 [一般工业技术]
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参考文献13

  • 1张继成,吴卫东,许华,唐晓红.磁控溅射技术新进展及应用[J].材料导报,2004,18(4):56-59. 被引量：20
  • 2田民波.薄膜科学与技术手册[S].北京:机械工业出版社,1991:3.
  • 3Munz W D. Properties of niobium-based wear and corrosion resistant hard PVD coating deposition on various steels[J]. Metal hal. 2002, 94(11-12): 25-27.
  • 4Kouznetsov V, Maca'k K, Schneider J M. A novel pulsed magnetron sputter technique utilizing very high target power densities [J]. Surface and Coatings Technology. 1999, (122): 290-293.
  • 5Helmersson U, Lattemann M, Bohlmark J. Review Ionized physical vapor deposition (IPVD): A review of technology and applications[J]. Thin Solid Films. 2006, (513): 1-24.
  • 6Boo J H, Jung M J, Park H K. High-rate deposition of copper thin films using newly designed high-power magnetron sputtering source [J]. Surface & Coatings Technology[J]. 2004, (188-189):721-727.
  • 7Hovsepian P E, Reinhard C, Ehiasarian A P. CrAlYN/CrN superlattice coatings deposited by the combined high power impulse magnetron sputtering/unbalanced magnetron sputtering technique [J]. Surface & Coatings Technology. 2006, (201): 4105-4110.
  • 8Reinhard C, Ehiasarian A P, Hovsepian P E. CrN/NbN superlattice structured coatings with enhanced corrosion resistance achieved by high power impulse magnetron sputtering interface pre-treatment [J]. Thin Solid Films [J]. 2007, (515):3685-3692.
  • 9Sittinger V, Ruske F, Werner W. High power pulsed magnetron sputtering of transparent conducting oxides [J]. Thin Solid Films. 2007, (101):1-13.
  • 10Alami J,Eklund P, Emmerlich J. High-power impulse magnetron sputtering of Ti-Si-C thin films from a Ti3SiC2 compound target [J]. Thin Solid Films. 2006, (515): 1731-1736.

二级参考文献59

  • 1Munz W D. Properties of niobium-based wear and corrosion resistant-hard PVD coating deposition on various steels[J]. Metal Ital. 2002, 94(11/12): 25-27.
  • 2Gudmundsson J T. Ionized physical vapor deposition (IPVD): Magnetron sputtering discharges [J]. Journal of Physics. 2008, ( 100): 082002.
  • 3Kouznetsov V, Maca'k K, Schneider J M. A novel pulsed magnctron sputter technique utilizing very high target power densities [J]. Surface and Coatings Technology 1999, ( 122): 290-293.
  • 4Sittinger V, Ruske F, Werner W. High power pulsed magnetron sputtering of transparent conducting oxides [J]. Thin Solid Films. 2008, (516): 5847-5859
  • 5In J H, Seo S H, Chang H Y. A novel pulsing method for the enhancement of the deposition rate in high power pulsed magnetron sputtering [J]. Surface & Coatings Technology. 2008, (06): 141.
  • 6Boo J H, Jung M J, Park H K. High-rate deposition of copper thin films using newly designed high-power magnetron sputtering source [J]. Surface & Coatings Technology,2004, (188-189): 721-727.
  • 7Bohlmark J, Stbye O M, Lattemann M. Guiding the deposition flux in an ionized magnetron discharge[J]. Thin Sohd Films. 2006, (515): 1928-1931.
  • 8Konstantinidis S, Dauchot P. Transport of ionized metal atoms in high-power pulsed magnetron discharges assisted by inductively coupled plasma [J]. Appl. Phys. Lett. 2006, (88): 021501.
  • 9Anders A, Andersson J. High power impulse magnetron sputtering: Current-voltage-time characteristics indicate the onset of sustained self-sputtering [J]. Journal of Applied Physics. 2007, (102): 113303.
  • 10Gudmundsson J T. Ionization mechanism in the high power impulse magnetron sputtering (HiPIMS) discharge [J]. Journal of Physics. 2008, (100): 082013.

共引文献44

同被引文献265

引证文献27

二级引证文献70

真空
2010年 第3期

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