半导体硅上电沉积Ni-Pd-P薄膜及其结构

Ni Pd P Film Electrodeposited on Semiconductor Silicon and Its Structure

采用控电位的沉积方式在半导体硅上制备出ＮｉＰｄＰ薄膜，结果表明镀液中Ｈ３ＰＯ３含量的增加对Ｐ、Ｎｉ的析出有促进作用，对Ｐｄ的析出有抑制作用．随ｐＨ值的升高，镍含量不断升高，Ｐｄ、Ｐ含量不断下降．Ｐ含量对薄膜内应力有很大影响，含Ｐ质量分数为１４９％的ＮｉＰｄＰ镀层表面上有许多裂缝，当Ｐ含量增加到２６１％时，镀层表面的裂缝已基本消失，继续增加Ｐ含量到３５０％时，裂缝完全消失．ＮｉＰｄＰ镀层的结构与其组成密切相关，Ｐ含量小于２００％的ＮｉＰｄＰ镀层形成的是面心立方结构的固溶体．Ｐ含量大于４００％的薄膜为非晶态结构．

Ni Pd P film was formed on semiconductor silicon by potential controlled electrodeposition technique. Results showed that addition of H 3PO 3 improved the deposition of Ni and P. With increase of pH of the plating solution, the content of Ni was increased and the Pd and P contents were decreased. The composition of P had a great effect on the inter stress of the film. Many cracks were found on the surface of the film containing 1 49% P, but they disappeared entirely when the P content was 3 50%. Deposit containing lower than 2% P was a solid solution with fcc structure. The structure changed from crystal to amorphous when P content was higher than 4%.