摘要
从功率VUMOSFET器件结构出发,通过使用模拟软件SILVACO进行工艺和器件仿真,根据仿真结果分析了器件沟道掺杂浓度分布对阈值电压的影响,进而提出工艺改进的措施.对功率VUMOSFET的设计与生产具有指导意义.
This article start from the structure of power VUMOSFET,through the use of simulation software SILVACO for process and device simulation,simulation results based on analysis of the device channel doping concentration distribution on the impact of threshold voltage,and process improvement measures put forward.In this paper,power VUMOSFET Design and production guidance.
出处
《微电子学与计算机》
CSCD
北大核心
2010年第6期131-133,共3页
Microelectronics & Computer
基金
沈阳市科技局科研项目(108186-2-00)
