锌掺杂半导体材料的共振电离质谱分析

Trace Analysis of Zn doped Compound Semiconductor Material by Resonant Ionization Mass Spectrometry

本文简要地描述了激光共振电离质谱的实验装置和测量方法，给出了用共振电离质谱方法对锌掺杂化合物半导体材料进行分析的光谱和质谱图，并估计了用这种方法进行痕量分析可能达到的检测限。

An experimental setup and the procedure for the laser resonant ionization mass spectrometry(RIMS) have been described.Both an optical spectrum and a mass spectum have been shown.The detection limit that can be reached by using this procedure has been estimated.