摘要
研究了非掺杂半绝缘LECGaAs的非本征室温(300K)光电流谱,在0.40~0.70eV范围发现了一个光响应宽带M1。M1带在0.46、0.49、0.56、0.65和0.69eV处出现五个峰,其中0.46、0.49、0.56和0.69eV峰的起始阈值分别为0.44、0.47、0.51和0.67eV。本文讨论了M1带的起源,提出了0.44、0.47和0.51eV光电离阈值与铜受主、EL3和氧施主间的可能联系,并研究了M1带与GaAs场效应晶体管漏-源电流光响应特性的关系。
Extrinsic photocurrent spectra of undoped LECSIGaAs have been measured to investigate the deep levels in this material.A broad photocurrent response band M 1 ranging from 0 40 to 0 70 eV has been observed.M 1 band reveals five peaks at 0 46,0 49,0 56,0 65 and 0 69 eV,respectively.The onset thresholds for the 0 46,0 49,0 56 and 0 69 eV peaks are 0 44,0 47,0 51 and 0 67 eV,respectively.It is likely that M 1 band is due to different deep levels and each of these deep levels has a concentration larger than 10 14 cm -3 .The origin of M 1 band is discussed and possible associations of the 0 44,0 47 and 0 51 eV thresholds with copper acceptor,EL3 and oxygen donor are presented.The relationship between M 1 band and the photoresponse behavior of drain current of GaAs field effect transistor was also investigated.
出处
《光谱学与光谱分析》
SCIE
EI
CAS
CSCD
北大核心
1999年第1期22-24,共3页
Spectroscopy and Spectral Analysis