Be等电子序列的奇宇称(J=2)的高激发态结构

HIGHLY EXCITED STATE STRUCTURE OF BERYLLIUM ISOELECTRONIC SEQUENCE WITH J=2 AND ODD PARITY

应用本征通道量子亏损理论（ＥＱＤＴ），研究ＢｅⅠ等电子序列（奇宇称，Ｊ＝２）的高激发态结构，得到了表征高激发态结构的ＥＱＤＴ参量（Ｕｉα，μα），以这些参量作为输入，获得了２ｓｎｐ、２ｐｎｓ、２ｓｎｆ、２ｐｎｄ组态的Ｒｙｄｂｅｒｇ能级位置及通道混合系数。

This paper caculated the highly excited states with J=2 and odd parity of the beryllium isoelectronic sequence by using the eigenchannel quantum defect theory (EQDT).It obtained the EQDT parameters U iα and μ α ,of Be like systems from BeⅠ to OⅤ,as functions of effective nuclear charge.These results indicate that the differences between eigenquantum defects of different channels,which characterize the channel interactions,gradually diminish along this sequence.This isoelectronic behaviour is caused by the competition between electronic and spin orbit interaction along the evaluated with EQDT parameters as input.As a numerical example,the Lu Fano plots of BeⅠ is given as wall.